Direct bonding, or fusion bonding, describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.These requirements are specified for the wafer surface as sufficiently clean, flat and smooth. Otherwise unbonded areas so called voids, i.e. interface bubbles, can occur. The procedural steps of the direct bonding process of wafers any surface is divided into
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| - Direct bonding, or fusion bonding, describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.These requirements are specified for the wafer surface as sufficiently clean, flat and smooth. Otherwise unbonded areas so called voids, i.e. interface bubbles, can occur. The procedural steps of the direct bonding process of wafers any surface is divided into (en)
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| - Direct bonding, or fusion bonding, describes a wafer bonding process without any additional intermediate layers. The bonding process is based on chemical bonds between two surfaces of any material possible meeting numerous requirements.These requirements are specified for the wafer surface as sufficiently clean, flat and smooth. Otherwise unbonded areas so called voids, i.e. interface bubbles, can occur. The procedural steps of the direct bonding process of wafers any surface is divided into 1.
* wafer preprocessing, 2.
* pre-bonding at room temperature and 3.
* annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the bonding process is also referred to as silicon direct bonding or silicon fusion bonding. The fields of application for silicon direct bonding are, e.g. manufacturing of Silicon on insulator (SOI) wafers, sensors and actuators. (en)
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